View AO4701_241294.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

July 2001
AO4701 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
General Description
The AO4701 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch.
Features
VDS (V) = -30V ID = -5A RDS(ON) < 49m (VGS = 10V) RDS(ON) < 64m (VGS = 4.5V) RDS(ON) < 120m (VGS = 2.5V) SCHOTTKY VDS (V) = 30V, IF = 3A, VF=0.5V@1A
D K
A A S G
1 2 3 4
8 7 6 5
K K D D G
SOIC-8
S
A
Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage TA=25C Continuous Drain CurrentA Pulsed Drain Current
B
MOSFET -30 12 -5 -4.2 -30
Schottky
Units V V A
VGS TA=70C ID IDM VKA TA=25C
A
Schottky reverse voltage Continuous Forward Current Pulsed Forward Current Power Dissipation Junction and Storage Temperature Range Parameter: Thermal Characteristics MOSFET t 10s Maximum Junction-to-AmbientA Maximum Junction-to-Ambient
C A B
TA=70C TA=25C TA=70C
IF IFM PD TJ, TSTG Symbol RJA RJL RJA RJL 2 1.44 -55 to 150 Typ 48 74 35 49 72 37
30 4.4 3.2 30 2 1.44 -55 to 150 Max 62.5 110 40 62.5 110 42
V A
W C Units C/W
Steady-State Steady-State t 10s Steady-State Steady-State
Maximum Junction-to-Lead Thermal Characteristics Schottky Maximum Junction-to-Ambient Maximum Junction-to-Lead
C A A
Maximum Junction-to-Ambient
C/W
Alpha & Omega Semiconductor, Ltd.
AO4701
Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=-250A, VGS=0V VDS=-24V, VGS=0V TJ=55C VDS=0V, VGS=12V VDS=VGS ID=-250A VGS=-4.5V, VDS=-5V VGS=-10V, ID=-5A Static Drain-Source On-Resistance TJ=125C VGS=-4.5V, ID=-4A VGS=-2.5V, ID=-1A VDS=-5V, ID=-5A 54 7 83 11 -0.75 -0.7 -25 42.5 49 74 64 120 -1 -3 -1 Min -30 -1 -5 100 -1.3 Typ Max Units V A nA V A m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC 0.5 0.05 10 20 V mA pF
gFS VSD IS
Forward Transconductance Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz
952 103 77 5.9 9.5 2 3.1 12 4 37 12 21 13 0.45 0.007 3.2 12 37
SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) tr tD(off) tf trr Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
VGS=-4.5V, VDS=-15V, ID=-4A
VGS=-10V, VDS=-15V, RL=3.6, RGEN=6
IF=-5A, dI/dt=100A/s Qrr Body Diode Reverse Recovery Charge IF=-5A, dI/dt=100A/s SCHOTTKY PARAMETERS VF Forward Voltage Drop IF=1.0A VR=30V Irm VR=30V, TJ=125C Maximum reverse leakage current VR=30V, TJ=150C CT Junction Capacitance VR=15V
A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA id il l ti
Alpha & Omega Semiconductor, Ltd.
AO4701 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25 -10V 20 15 10 5 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics 120 Normalized On-Resistance 100 RDS(ON) (m) 80 60 40 VGS=-10V 20 0 2 4 6 8 10 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.6 -2.5V -4.5V -3V -ID (A) 6 -ID(A) 4 125C 10 VDS=-5V 8
VGS=-2V
2
25C
0 0 0.5 1 1.5 2 2.5 3 -VGS(Volts) Figure 2: Transfer Characteristics
ID=-5A VGS=-4.5V VGS=-10V
VGS=-2.5V
1.4
1.2
VGS=-4.5V
VGS=-2.5V ID=-2A
1
190 170 150 RDS(ON) (m) 130 110 90 70 50 30 10 0 2 4 6 8 10 25C 125C ID=-2A -IS (A)
1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics 25C
125C
-VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha and Omega Semiconductor, Ltd.
AO4701
5
3
50
175
perature
1.0 stics
1.2
Alpha and Omega Semiconductor, Ltd.
AO4701 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5 4 -VGS (Volts) 3 2 1 200 0 0 2 4 6 8 10 12 -Qg (nC) Figure 7: Gate-Charge Characteristics 0 0 5 10 15 20 25 30 -VDS (Volts) Figure 8: Capacitance Characteristics VDS=-15V ID=-5A Capacitance (pF) 1400 1200 1000 800 600 400 Coss Crss Ciss
100.0
TJ(Max)=150C TA=25C RDS(ON) limited 0.1s
40 10s 100s 1ms 10ms Power (W) 30 TJ(Max)=150C TA=25C
-ID (Amps)
10.0
20
1.0
1s 10s DC
10
0.1 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100
0 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 Z JA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=62.5C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD Ton Single Pulse
T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
AO4701 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY
10 125C Capacitance (pF) 250 f = 1MHz 1 IF (Amps) 200 150 100 50 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 5 10 15 20 25 30 VF (Volts) Figure 12: Schottky Forward Characteristics VKA (Volts) Figure 13: Schottky Capacitance Characteristics
0.1
0.01 25C 0.001
0.7 0.6 0.5 VF (Volts) 0.4 0.3 0.2 0.1 0 25 50 75 100 125 Temperature (C) 150 175 IF=3A
100 10 1 VR=30V 0.1 0.01 0.001 0 25 50 75 100 125 150 175 Temperature (C) Figure 15: Schottky Leakage current vs. Junction Temperature
IF=1A
Figure 14: Schottky Forward Drop vs. Junction Temperature 10 Z JA Normalized Transient Thermal Resistance D=Ton/(Ton+Toff ) TJ,PK=TA+PDM.ZJA.RJA RJA=62.5C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
Leakage Current (mA)
0.1
PD Ton Single Pulse
Toff
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 15: Schottky Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
ALPHA & OMEGA
SEMICONDUCTOR, INC.
SO-8 Package Data
DIMENSIONS IN MILLIMETERS SYMBOLS
DIMENSIONS IN INCHES
A A1 A2 b c D E1 e E h L aaa
MIN 1.45 0.00 --- 0.33 0.19 4.80 3.80 5.80 0.25 0.40 --- 0
NOM 1.50 --- 1.45 --- --- --- --- 1.27 BSC --- --- --- --- ---
MAX 1.55 0.10 --- 0.51 0.25 5.00 4.00 6.20 0.50 1.27 0.10 8
MIN 0.057 0.000 --- 0.013 0.007 0.189 0.150 0.228 0.010 0.016 --- 0
NOM 0.059 --- 0.057 --- --- --- --- 0.050 BSC --- --- --- --- ---
MAX 0.061 0.004 --- 0.020 0.010 0.197 0.157 0.244 0.020 0.050 0.004 8
NOTE: 1. LEAD FINISH: 150 MICROINCHES ( 3.8 um) MIN. THICKNESS OF Tin/Lead (SOLDER) PLATED ON LEAD 2. TOLERANCE 0.10 mm (4 mil) UNLESS OTHERWISE SPECIFIED 3. COPLANARITY : 0.10 mm 4. DIMENSION L IS MEASURED IN GAGE PLANE
PACKAGE MARKING DESCRIPTION
RECOMMENDED LAND PATTERN
NOTE: LOGO - AOS LOGO 4701 - PART NUMBER CODE. F - FAB LOCATION A - ASSEMBLY LOCATION Y - YEAR CODE W - WEEK CODE. LN - ASSEMBLY LOT CODE
SO-8 PART NO. CODE
UNIT: mm
PART NO. AO4701
CODE 4701
Rev. A
ALPHA & OMEGA
SEMICONDUCTOR, INC.
SO-8 Carrier Tape
SO-8 Tape and Reel Data
SO-8 Reel
SO-8 Tape
Leader / Trailer & Orientation

▲Up To Search▲

Price & Availability of AO4701

	To Download AO4701 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .